Inclined-epitaxy of β-SiC on Si(n11) substrates (n = 3, 4, 5, 6) by chemical vapor deposition

✍ Scribed by M. Shigeta; Y. Fujii; A. Ogura; K. Furukawa; A. Suzuki; S. Nakajima

• Publisher: Elsevier Science
• Year: 1988
• Tongue: English
• Weight: 823 KB
• Volume: 93
• Category: Article
• ISSN: 0022-0248
• DOI: 10.1016/0022-0248(88)90617-3