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InAs/GaAs quantum-dot saturable absorbers for diode-pumped passively Q-switched Nd-doped 1.3-µm lasers

✍ Scribed by Lai, H. C.; Li, A.; Su, K. W.; Ku, M. L.; Chen, Y. F.; Huang, K. F.

Book ID
115427228
Publisher
Optical Society of America
Year
2005
Tongue
English
Weight
352 KB
Volume
30
Category
Article
ISSN
0146-9592

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✍ Shengzhi Zhao; Lei Chen; Hongming Zhao; Guiqiu Li; Lu Zhang; Kejian Yang 📂 Article 📅 2005 🏛 Elsevier Science 🌐 English ⚖ 210 KB

A laser-diode-pumped passively Q-switched new type crystal Nd 3+ :NaY(WO4)2 (known as Nd:NYW) laser with GaAs semiconductor saturable absorber has been realized. The dependence of pulse repetition rate, pulse energy, pulse width, and peak power on pump power for di erent output coupler re ectivities