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InAs/GaAs quantum dot infrared photodetector (QDIP) with double Al0.3Ga0.7As blocking barriers

✍ Scribed by Shiang-Feng Tang; Shih-Yen Lin; Si-Chen Lee

Book ID
114616822
Publisher
IEEE
Year
2002
Tongue
English
Weight
314 KB
Volume
49
Category
Article
ISSN
0018-9383

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Hole structure of a GaAs-Al 0.3 Ga 0.7 As p-type multiple quantum well (MQW) subjected to an electric field parallel to the growth axis is studied using the envelope-function approximation and taking into account the valence subband mixing. The system considered in this work consists of five GaAs we