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InAs quantum dot infrared photodetectors with In[sub 0.15]Ga[sub 0.85]As strain-relief cap layers

✍ Scribed by Ye, Zhengmao; Campbell, Joe C.; Chen, Zhonghui; Kim, Eui-Tae; Madhukar, Anupam


Book ID
121329751
Publisher
American Institute of Physics
Year
2002
Tongue
English
Weight
371 KB
Volume
92
Category
Article
ISSN
0021-8979

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Influence of In0.15Ga0.85As capping laye
✍ Mirja Richter; Dirk Reuter; Jean-Yves Duboz; Andreas D. Wieck πŸ“‚ Article πŸ“… 2008 πŸ› Elsevier Science 🌐 English βš– 346 KB

Self-assembled InAs/(In,Ga)As quantum dots were embedded into n-or p-type Schottky diodes to investigate the conduction and valence band states, respectively. The samples were prepared by molecular beam epitaxy, and capacitance-voltage (C(V)) spectroscopy as well as photoluminescence (PL) measuremen