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In situRaman spectroscopy of topological insulator Bi2Te3films with varying thickness

✍ Scribed by Wang, Chunxiao; Zhu, Xiegang; Nilsson, Louis; Wen, Jing; Wang, Guang; Shan, Xinyan; Zhang, Qing; Zhang, Shulin; Jia, Jinfeng; Xue, Qikun

Book ID
120598952
Publisher
Tsinghua Press
Year
2013
Tongue
English
Weight
632 KB
Volume
6
Category
Article
ISSN
1998-0124

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MBE growth optimization of topological i
MBE growth optimization of topological insulator Bi2Te3 films
✍ J. Krumrain; G. Mussler; S. Borisova; T. Stoica; L. Plucinski; C.M. Schneider; D πŸ“‚ Article πŸ“… 2011 πŸ› Elsevier Science 🌐 English βš– 716 KB

We investigated the growth of the topological insulator Bi 2 Te 3 on Si(1 1 1) substrates by means of molecular-beam epitaxy (MBE). The substrate temperature as well as the Bi and Te beam-equivalent pressure (BEP) was varied in a large range. The structure and morphology of the layers were studied u