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In situ transmission electron microscopy studies of radiation damage in copper indium diselenide

✍ Scribed by S.E. Donnelly; J.A. Hinks; P.D. Edmondson; R.D. Pilkington; M. Yakushev; R.C. Birtcher


Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
204 KB
Volume
242
Category
Article
ISSN
0168-583X

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In situ transmission electron microscopy was used to investigate the ageing behaviour of Si-based solar cells. The structural and compositional changes of the NiSi layer of such cells were determined. ageing tests. Figures 1B-D show the changes of the sample after t = 15, 60 and 120 min. Already aft