A procedure for the determination of the interface layer thickness between the bulk Ðlm and the Si substrate SiO 2 from single-wavelength null ellipsometric data is described. The e †ect of the angular errors in the angle of incidence is eliminated because it is found along with the Ðlm and interfac
✦ LIBER ✦
In situ thickness determination of multilayered structures using single wavelength ellipsometry and reverse engineering
✍ Scribed by Rademacher, Daniel ;Vergöhl, Michael ;Richter, Uwe
- Book ID
- 115356904
- Publisher
- The Optical Society
- Year
- 2010
- Tongue
- English
- Weight
- 944 KB
- Volume
- 50
- Category
- Article
- ISSN
- 1559-128X
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