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In situ synthesis of Bi/Bi2S3 heteronanowires with nonlinear electrical transport

✍ Scribed by Xiaohu Huang; Youwen Yang; Xincun Dou; Yonggang Zhu; Guanghai Li

Book ID
116602767
Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
874 KB
Volume
461
Category
Article
ISSN
0925-8388

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Intrinsic bismuth sulfide deposited on indium thin films (&20 nm) change to n-type when annealed in air or nitrogen atmosphere. As deposited bismuth sulfide on the In films is amorphous and electrically very resistive. Annealing the films in air at 200, 300, and 400°°C results in the formation of In