In situ silicon solid state regrowth kinetics measurement in a rapid thermal processor
β Scribed by J.-M. Dilhac; N. Nolhier; C. Ganibal
- Publisher
- Elsevier Science
- Year
- 1990
- Tongue
- English
- Weight
- 300 KB
- Volume
- 46
- Category
- Article
- ISSN
- 0169-4332
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π SIMILAR VOLUMES
Three types of solid state reactions -namely the precipitation formation (dissolution) of spine1 or metal particles, both in (A, \_\_,B,), .&O solid solutions, and the oxidation of metal foils to the corresponding oxide BO,, -were studied first by means of DEXAFS spectroscopy. This technique allows
## Abstract This paper is the second part of a review of some of the controversial kinetic aspects of conventional thermal analysis (TA). In this part the physicoβgeometric kinetics for the solidβstate reactions were examined. The main problems discussed are (1) problems in fitting kinetics data: t