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In situ RBS investigation of damage production during ion implantation in AlxGa1−xAs at 20 K

✍ Scribed by B Breeger; E Wendler; Ch Schubert; W Wesch

Book ID
114170684
Publisher
Elsevier Science
Year
1999
Tongue
English
Weight
223 KB
Volume
148
Category
Article
ISSN
0168-583X

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## Abstract The medium range implantation of rare earth ions at room temperature in GaN layers leads to the formation of point defect clusters, basal and prismatic stacking faults from the lowest fluence. When a threshold fluence of about 3 × 10^15^ at/cm^2^ is reached, a highly disordered ‘nanocry