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In situ Raman spectroscopy study on silicon surface in NH4OH/H2O2 and HCl/H2O2 aqueous solutions

✍ Scribed by J. Wang; H. Tu; Q. Zhou; W. Zhu; A. Liu

Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
153 KB
Volume
56
Category
Article
ISSN
0167-9317

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✦ Synopsis

The chemical nature of Si(100) surfaces during immersion in NH OH / H O / H O (SC-1) and HCl / H O / H O (SC-2) 4 2 2 2 2 2 2 has been investigated in situ using confocal Raman spectroscopy. In SC-1 solution, there are two kinds of oxides at the silicon surfaces. One oxide is originated from the effect of NH OH, the other is associated with hydrogen and forms due to 4 the coaction of NH OH and H O . In SC-2 solution, the silicon surface is covered mainly with oxides caused by H O . It 4 2 2 2 2

has been found that a few Si-H bonds exist at the silicon surfaces in both solutions. The chemical model of the silicon surface in the solutions has been discussed in the paper.

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