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In situ observations of crystal growth behavior of silicon melt

✍ Scribed by Kozo Fujiwara; Keiji Nakajima; Toru Ujihara; Noritaka Usami; Gen Sazaki; Hajime Hasegawa; Shozo Mizoguchi; Kazuo Nakajima

Book ID
108341680
Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
375 KB
Volume
243
Category
Article
ISSN
0022-0248

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The generation mechanism of pinhole defects in the Czochralski (CZ)-grown silicon (Si) single crystals was clarified by in-situ observations of bubble formation at the interface between Si melt and a silica glass crucible in a small experimental apparatus. The nucleation and growth of bubbles were f