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In situ metalorganic chemical vapor deposition of Al2O3 on N-face GaN and evidence of polarity induced fixed charge

✍ Scribed by Liu, X.; Kim, J.; Suntrup, D. J.; Wienecke, S.; Tahhan, M.; Yeluri, R.; Chan, S. H.; Lu, J.; Li, H.; Keller, S.; Mishra, U. K.

Book ID: 126690172
Publisher: American Institute of Physics
Year: 2014
Tongue: English
Weight: 517 KB
Volume: 104
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.4886768

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