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Effect of processing parameters on the deposition rate of Si3N4/Si2N2O by chemical vapor infiltration and the in situ thermal decomposition of Na2SiF6

✍ Scribed by M.I. Pech-Canul; J.L. de la Peña; A.L. Leal-Cruz

Publisher
Springer
Year
2007
Tongue
English
Weight
509 KB
Volume
89
Category
Article
ISSN
1432-0630

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## Abstract When carbon films are prepared using thermal CVD, the properties of carbon films are affected by many factors, such as the precursor gas, deposition temperature, and working pressure. It is believed that the substrate size is also an important factor in preparing carbon films by thermal