We report on the growth of epitaxial Fe/MgO heterostructures on Ge(0 0 1) by Molecular Beam Epitaxy. The better crystal quality and interfacial chemical sharpness at the oxide-semiconductor interface have been obtained by growing MgO at room temperature, followed by a post-annealing at 773 K, on top
In situ GISAXS study of the growth of Pd on MgO(0 0 1)
โ Scribed by F. Leroy; C. Revenant; G. Renaud; R. Lazzari
- Publisher
- Elsevier Science
- Year
- 2004
- Tongue
- English
- Weight
- 191 KB
- Volume
- 238
- Category
- Article
- ISSN
- 0169-4332
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