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In situ current-voltage characterization of swift heavy ion irradiated Au/n-GaAs Schottky diode at low temperature

✍ Scribed by Singh, R.; Arora, S. K.; Singh, J. P.; Kanjilal, D.

Book ID
120425635
Publisher
Taylor and Francis Group
Year
2002
Tongue
English
Weight
138 KB
Volume
157
Category
Article
ISSN
1042-0150

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In-situ current–voltage analysis of Au/G
In-situ current–voltage analysis of Au/GaAs Schottky diode under nitrogen ion irradiation
✍ A.T. Sharma; Shahnawaz; Sandeep Kumar; Y.S. Katharria; P. Kumar; D. Kanjilal πŸ“‚ Article πŸ“… 2009 πŸ› Elsevier Science 🌐 English βš– 345 KB

## In-situ I-V Schottky barrier height Ideality factor The effect of irradiation by 650 keV 14 N 5+ ions on the electrical characteristics of a Au/GaAs Schottky diode is analyzed with an in-situ current-voltage characterization technique. The Schottky barrier height (SBH) is found to be 0.55 Β± 0.01