In-situ current–voltage analysis of Au/GaAs Schottky diode under nitrogen ion irradiation

✍ Scribed by A.T. Sharma; Shahnawaz; Sandeep Kumar; Y.S. Katharria; P. Kumar; D. Kanjilal

• Publisher: Elsevier Science
• Year: 2009
• Tongue: English
• Weight: 345 KB
• Volume: 203
• Category: Article
• ISSN: 0257-8972
• DOI: 10.1016/j.surfcoat.2009.02.091

✦ Synopsis

In-situ I-V Schottky barrier height Ideality factor

The effect of irradiation by 650 keV 14 N 5+ ions on the electrical characteristics of a Au/GaAs Schottky diode is analyzed with an in-situ current-voltage characterization technique. The Schottky barrier height (SBH) is found to be 0.55 ± 0.01 eV for an un-irradiated diode and remains practically unchanged (0.54 ± 0.01 eV) at the highest ion irradiation fluence of 1 × 10 14 ions cm -2 . The ideality factor is found as 2.5 for the as-prepared diode and increases to 3.1 at the highest ion irradiation fluence. The results are discussed with reference to the energy loss mechanism of a swift heavy ion as it passes through the metal-semiconductor interface.