Application of small voltages in the range from 0.5 V to 1 V to an originally homogeneously Fe-doped (0.5 tool-%) TiO2 semiconductor at temperatures between 700 ° C and 750 ° C caused the formation of a p-n junction within the sample. This is indicated by a change of the U-I characteristics from a s
In situ characterization of semiconductor—liquid junctions: surface optimization of n-CuInSe2
✍ Scribed by Micha Tomkiewicz
- Publisher
- Elsevier Science
- Year
- 1985
- Weight
- 616 KB
- Volume
- 29
- Category
- Article
- ISSN
- 0047-2670
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