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In situ B doping of SiGe(C) using BCl3 in ultraclean hot-wall LPCVD

โœ Scribed by Yasuo Kunii; Yasuhiro Inokuchi; Atsushi Moriya; Harushige Kurokawa; Junichi Murota

Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
207 KB
Volume
224
Category
Article
ISSN
0169-4332

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An in-situ study of the oxidation of AlN
An in-situ study of the oxidation of AlN layers fabricated by LPCVD using X-ray diffraction
โœ C. Labatut; D. Kharchi; B. Aspar; F. Sibieude; B. Armas ๐Ÿ“‚ Article ๐Ÿ“… 1994 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 839 KB

A1N layers were elaborated on SiC substrates using the method of low-pressure chemical vapour deposition ( LPCVD ). The oxMation of these layers was studied in an X-ray diffkaction chamber at temperalures between 900 and 1400~C with an oxygen flow (20 SCCM ) at a pressure of 85 x 103 Pa. The oxidat