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In-plane control of morphology and tunable photoluminescence in porous silicon produced by metal-assisted electroless chemical etching

โœ Scribed by Chattopadhyay, Soma; Li, Xiuling; Bohn, Paul W.

Book ID
121443875
Publisher
American Institute of Physics
Year
2002
Tongue
English
Weight
656 KB
Volume
91
Category
Article
ISSN
0021-8979

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## Abstract Samples containing silicon nanowires (Siโ€NWs) and highly porous structures (Pโ€Si) were prepared by electroless wet chemical etching (EWCE) of crystalline silicon wafers using various etching parameters. Photoluminescence (PL) measurements were performed with excitation at 488โ€‰nm and a p