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In-gap optical absorption of amorphous Si3N4

โœ Scribed by Seager, C. H.; Knapp, J. A.


Book ID
120452971
Publisher
American Institute of Physics
Year
1984
Tongue
English
Weight
541 KB
Volume
45
Category
Article
ISSN
0003-6951

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From transmission and reflection measurements on glow discharge prepared a-Si:Hx(x=0.09-0.19) films we obtain the imaginary part of the dielectric constant, e2 in the range 1.4 to 3.8 eV. We compare this data with the prediction of a model first introduced by Tauc for optical transitions, with momen