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in GaAs and its relation to the EL 3 level

✍ Scribed by Kaufmann, U.; Klausmann, E.; Schneider, J.; Alt, H. Ch.

Book ID
121392783
Publisher
The American Physical Society
Year
1991
Tongue
English
Weight
220 KB
Volume
43
Category
Article
ISSN
1098-0121

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✍ O.A. Soltanovich; E.B. Yakimov; E.V. Erofeev; V.A. Kagadei; J. Weber πŸ“‚ Article πŸ“… 2009 πŸ› Elsevier Science 🌐 English βš– 236 KB

A deep trap with energy level at E C -0.45 eV is detected in n-type GaAs epilayers after hydrogenation. This level exhibits a bias-dependent annealing behaviour in the temperature range 290-400 K. The relation of this defect to the well-known metastable hydrogen-related M3/M4 defect is discussed.