Spontaneous formation of GaN nanostructu
โ
Manoj Kesaria; Satish Shetty; S.M. Shivaprasad
๐
Article
๐
2011
๐
Elsevier Science
๐
English
โ 515 KB
We have identified crystal growth conditions in plasma-assisted molecular beam epitaxy (PAMBE) that leads to spontaneous formation of GaN nanostructure like nanowalls, nanotubes, and nanorods on c-plane sapphire. We have grown GaN on c-plane Al 2 O 3 substrate at temperatures 630, 680 and 780 1C. Th