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Impurity segregation in directional solidified multi-crystalline silicon

✍ Scribed by M.P. Bellmann; E.A. Meese; L. Arnberg


Book ID
108166121
Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
647 KB
Volume
312
Category
Article
ISSN
0022-0248

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The impact of germanium doping on the di
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In this paper experimental results on the effect of the Ge doping on the distribution of dislocations in directional solidified multi-crystalline (mc) Si are presented. The dislocation density distribution is analyzed on the basis of the average dislocation density and the cumulative probability by