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Impurity doping in self-assembled InAs/GaAs quantum dots by selection of growth steps

โœ Scribed by Inoue, Tomoya; Kido, Satoshi; Sasayama, Kengo; Kita, Takashi; Wada, Osamu


Book ID
120508877
Publisher
American Institute of Physics
Year
2010
Tongue
English
Weight
839 KB
Volume
108
Category
Article
ISSN
0021-8979

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Site-selective growth of self-assembled
โœ M. Mehta; D. Reuter; A. Melnikov; A.D. Wieck; A. Remhof ๐Ÿ“‚ Article ๐Ÿ“… 2008 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 373 KB

A site-selective growth of self-organized InAs quantum dots (QDs) employing a combination of in-situ focused ion beam (FIB) implantation and self-organized molecular beam epitaxy (MBE) growth has been successfully demonstrated. First, a buffer layer of GaAs was grown by MBE before a square lattice o