Impurity distribution and electrical characteristics of boron-doped Si1−xGex/Sip+/N heterojunction diodes produced using pulsed UV-laser-induced epitaxy and Gas-immersion laser doping

✍ Scribed by K.-J. Kramer; S. Talwar; P. G. Carey; E. Ishida; D. Ashkenas; K. H. Weiner; T. W. Sigmon

• Book ID: 104725589
• Publisher: Springer
• Year: 1993
• Tongue: English
• Weight: 514 KB
• Volume: 57
• Category: Article
• ISSN: 1432-0630
• DOI: 10.1007/bf00331223