## LETTERS TO THE EDITOR 229 is invariant in the same sense that A is because is inde~ndent of the choice for c~r~nate system, and this expression may therefore be defined as D.
Impurity diffusion of 114In in Cu
β Scribed by Dipl.-Phys. G. Krautheim; Dipl.-Phys. A. Neidhardt; Dipl.-Phys. U. Reinhold
- Publisher
- John Wiley and Sons
- Year
- 1978
- Tongue
- English
- Weight
- 274 KB
- Volume
- 13
- Category
- Article
- ISSN
- 0232-1300
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β¦ Synopsis
Using the tracer-standard sectioning technique the impurity diffusion of indium in copper has been investigated in the temperature range from 798.1 to 1081.0 "C. For the frequency factor and the activation energy, respectively, the following values were determined : Do, = 1.87 cni2 . s-1; Q, = 2.034 eV. The results are conipared with predictions of theoretical models of the impurity diffusion in metals. illit Hilfe der Tracer-Standardschichtenteilurrgstechnik w i d e die Freniddiffusion von Indium in Kupfer in1 Temperaturbereich von 798,l bis 1081,O "C untersucht. Fiir den Frequenzfaktor bzw. die Aktivierungsenergie wurden folgende Werte ermittelt: Do, = 1,87 cni2 . s-1; &, = 2,034 eV. Bei einem Vergleich der Ergebriisse niit theoretischen Modellen fur die Fremddiffusion in hletallen zeigt sich eine gute tfbereinstimniung zwi-Theorie und Experiment.
π SIMILAR VOLUMES
## Abstract Based on a model for redistributing heavy metals in twoβphaseβsilicon an expression is obtained, describing the intensity of redistribution, being determined by the segregation coefficient between intrinsic and phosphorusβdoped silicon and the spatial extension of the phosphorus phase.