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Impurity dependence of annealing of γ-ray irradiated n-type germanium

✍ Scribed by Fumiko Nakazawa; Shiori Ishino; Iwao Higashinakagawa; Ryukiti R. Hasiguti


Publisher
Elsevier Science
Year
1965
Tongue
English
Weight
127 KB
Volume
3
Category
Article
ISSN
0038-1098

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Effect of Annealing on Defects in As-Gro
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g-irradiation induced defects ( 60 Co, dose of 3 Â 10 19 cm À2 ) in n-GaN epilayers with a carrier concentration of 10 17 cm À3 (slightly doped) and 10 18 cm À3 (heavily doped) grown by low-pressure MOCVD on (0001) sapphire substrates have been investigated. The g-irradiation decreases the electron