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Impurity binding energy of lowest-excited state in (In,Ga)N–GaN spherical QD under electric field effect

✍ Scribed by Ghazi, Haddou El; Jorio, Anouar; Zorkani, Izeddine

Book ID
121693843
Publisher
Elsevier Science
Year
2013
Tongue
English
Weight
418 KB
Volume
426
Category
Article
ISSN
0921-4526

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✍ Sotirios Baskoutas; Andreas F. Terzis 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 327 KB

Using the potential morphing method in the effective mass approximation, we have studied the behavior of the impurity binding energy as a function of the impurity position, for different applied electric fields, different Al concentrations at the well center, in strong, intermediate and weak confine