Effects of hydrostatic pressure and external electric field on the impurity binding energy in strained GaN/AlxGa1−xN spherical quantum dots
✍ Scribed by Mu-ren Dalai 达来木仁, Zu-wei Yan 闫祖威, Lei Shi 石磊
- Book ID
- 113090542
- Publisher
- Tianjin University of Technology
- Year
- 2012
- Tongue
- English
- Weight
- 203 KB
- Volume
- 8
- Category
- Article
- ISSN
- 1673-1905
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📜 SIMILAR VOLUMES
The binding energies of a hydrogenic donor in a GaAs spherical quantum dot in the Ga 12x Al x As matrix are presented assuming parabolic confinement. Effects of hydrostatic pressure and electric field are discussed on the results obtained using a variational method. Effects of the spatial variation
The binding energy of a shallow hydrogenic impurity in a spherical quantum dot under hydrostatic pressure with square well potential is calculated using a variational approach within the effective mass approximation. The effect of conduction band non-parabolicity on these energies is also estimated.