𝔖 Bobbio Scriptorium

✦ LIBER ✦

Improving the non-quasi-static weak-to-strong-inversion four-terminal MOSFET model

✍ Scribed by Bagheri, M.

Book ID: 114596228
Publisher: IEEE
Year: 1987
Tongue: English
Weight: 347 KB
Volume: 34
Category: Article
ISSN: 0018-9383
DOI: 10.1109/t-ed.1987.23349

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Comparison of quasi-static and non-quasi

Comparison of quasi-static and non-quasi-static capacitance models for the four-terminal MOSFET

✍ Kam-wing Chai; J. Paulos 📂 Article 📅 1987 🏛 IEEE 🌐 English ⚖ 779 KB

[IEEE 1994 IEEE International Electron D

[IEEE 1994 IEEE International Electron Devices Meeting - San Francisco, CA, USA (11-14 Dec. 1994)] Proceedings of 1994 IEEE International Electron Devices Meeting - A relaxation time approach to model the non-quasi-static transient effects in MOSFETs

✍ Mansun Chan, ; Kelvin Hui, ; Neff, R.; Chenming Hu, ; Ping Keung Ko, 📂 Article 📅 1994 🏛 IEEE ⚖ 347 KB