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[IEEE 1994 IEEE International Electron Devices Meeting - San Francisco, CA, USA (11-14 Dec. 1994)] Proceedings of 1994 IEEE International Electron Devices Meeting - A relaxation time approach to model the non-quasi-static transient effects in MOSFETs

✍ Scribed by Mansun Chan, ; Kelvin Hui, ; Neff, R.; Chenming Hu, ; Ping Keung Ko,

Book ID: 115462710
Publisher: IEEE
Year: 1994
Weight: 347 KB
Volume: 0
Category: Article
ISBN-13: 9780780321113
DOI: 10.1109/iedm.1994.383438

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