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Improving the electrical conductivity of CuCrO2 thin film by N doping

✍ Scribed by Guobo Dong; Ming Zhang; Xueping Zhao; Hui Yan; Chunyu Tian; Yonggang Ren

Publisher: Elsevier Science
Year: 2010
Tongue: English
Weight: 488 KB
Volume: 256
Category: Article
ISSN: 0169-4332
DOI: 10.1016/j.apsusc.2010.01.094

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✦ Synopsis

N-doped CuCrO 2 thin films were prepared by using radio frequency magnetron sputtering technique. The XRD and XPS measurements were used to confirm the existence of the N acceptors in CuCrO 2 thin films. Hall measurements show the p-type conduction for all films. The electrical conductivity increases rapidly with the increase in N doping concentration, and the maximum of the electrical conductivity of 17 S cm À1 is achieved for the film deposited with 30 vol.% N 2 O, which is about three orders of magnitude higher than that of the undoped CuCrO 2 thin film. Upon increasing the doping concentrations the band gaps of N-doped CuCrO 2 thin films increase due to the Burstein-Moss shift.

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