✦ LIBER ✦

Improvements in the theory of growth of LPE layers of GaAs and interpretation of recent experiments

✍ Scribed by R. Muralidharan; S.C. Jain

Publisher: Elsevier Science
Year: 1980
Tongue: English
Weight: 1023 KB
Volume: 50
Category: Article
ISSN: 0022-0248
DOI: 10.1016/0022-0248(80)90017-2

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Comparison of theory and experiment for

Comparison of theory and experiment for LPE layer thickness of GaAs and GaAs Alloys

✍ R.L. Moon; J. Kinoshita 📂 Article 📅 1974 🏛 Elsevier Science 🌐 English ⚖ 560 KB

Investigation of the mechanism and kinet

Investigation of the mechanism and kinetics of growth of LPE GaAs

✍ T. Bryśkiewicz 📂 Article 📅 1978 🏛 Elsevier Science 🌐 English ⚖ 991 KB

Composition profiles and growth kinetics

Composition profiles and growth kinetics of GaxIn1−xP LPE layers: Experiments and theoretical approach

✍ H. Mariette; V. Thierry-Mieg; A. Etcheberry; J.C. Guillaume; A. Marbeuf; M. Romm 📂 Article 📅 1981 🏛 Elsevier Science 🌐 English ⚖ 397 KB

Reduction of Al contamination in the GaA

Reduction of Al contamination in the GaAs layer of LPE-grown AlxGa1−xAs-GaAs heterostructures

✍ L. Kopf; S. Sumski 📂 Article 📅 1975 🏛 Elsevier Science 🌐 English ⚖ 179 KB

An improved LPE apparatus for the growth

An improved LPE apparatus for the growth of GaSb and GaAlSb epitaxial layers for infrared photodiodes

✍ C. Heinz; W.Schmidt Auf Altenstadt 📂 Article 📅 1984 🏛 Elsevier Science 🌐 English ⚖ 403 KB

Addition to the theory of LPE growth: Cr

Addition to the theory of LPE growth: Crystallization mechanisms

✍ N. S. Peev 📂 Article 📅 2010 🏛 John Wiley and Sons 🌐 English ⚖ 582 KB

## Abstract Different possible mechanisms of crystal growth for the used in the practice LPE techniques are considered in the present paper. The time dependences of the super saturation for the cases of normal growth mechanism and screw dislocations growth mechanism are presented. The values of the