An improved LPE apparatus for the growth of GaSb and GaAlSb epitaxial layers for infrared photodiodes

✍ Scribed by C. Heinz; W.Schmidt Auf Altenstadt

• Publisher: Elsevier Science
• Year: 1984
• Tongue: English
• Weight: 403 KB
• Volume: 67
• Category: Article
• ISSN: 0022-0248
• DOI: 10.1016/0022-0248(84)90203-3