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Improvement of a-Si:H device stability and performances by proper design of the interfaces

✍ Scribed by R. Martins; I. Ferreira; A. Cabrita; E. Fortunato

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

New Steps to Improve a-Si:H Device Stabi

✍ R. Martins; I. Ferreira; A. Cabrita; H. Águas; V. Silva; E. Fortunato 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 224 KB 👁 2 views

Towards the improvement of the stability

✍ R Martins; H Águas; I Ferreira; E Fortunato; L Guimarães 📂 Article 📅 2001 🏛 Elsevier Science 🌐 English ⚖ 116 KB

High-Temperature Stability and Enhanced

✍ Indluru, A.; Alford, T.L. 📂 Article 📅 2010 🏛 IEEE 🌐 English ⚖ 387 KB

Electrical properties of the Si-SiO2 int

📂 Article 📅 1978 🏛 Elsevier Science 🌐 English ⚖ 100 KB

Interface properties of a-Si:H/Si3N4+x a

✍ S. Nitta; H. Miyazima; M. Mukai; S. Nonomura; S.Q. Gu; P.C. Taylor 📂 Article 📅 1991 🏛 Elsevier Science 🌐 English ⚖ 279 KB

Interface Design to Improve the Performa

✍ Min, Jie; Luponosov, Yuriy N.; Zhang, Zhi-Guo; Ponomarenko, Sergei A.; Ameri, Ta 📂 Article 📅 2014 🏛 John Wiley and Sons 🌐 English ⚖ 1015 KB