Improved stability of amorphous zinc tin oxide thin film transistors using molecular passivation

✍ Scribed by Rajachidambaram, M. S.; Pandey, A.; Vilayurganapathy, S.; Nachimuthu, P.; Thevuthasan, S.; Herman, G. S.

• Book ID: 121688180
• Publisher: American Institute of Physics
• Year: 2013
• Tongue: English
• Weight: 740 KB
• Volume: 103
• Category: Article
• ISSN: 0003-6951
• DOI: 10.1063/1.4826457