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Improved Resistive Switching Dispersion of NiO x Thin Film by Cu-Doping Method

โœ Scribed by Liu, Chih-Yi; Lin, Xin-Jie; Wang, Hung-Yu; Lai, Chun-Hung

Book ID
124148860
Publisher
Institute of Pure and Applied Physics
Year
2010
Tongue
English
Weight
211 KB
Volume
49
Category
Article
ISSN
0021-4922

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NiO thin films by MOCVD of Ni(dmamb)2 an
NiO thin films by MOCVD of Ni(dmamb)2 and their resistance switching phenomena
โœ K.-C. Min; M. Kim; Y.-H. You; S.S. Lee; Y.K. Lee; T.-M. Chung; C.G. Kim; J.-H. H ๐Ÿ“‚ Article ๐Ÿ“… 2007 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 791 KB

We have synthesized the volatile, liquid, nickel precursor Ni(dmamb) 2 , nickel bis(1-dimethylamino-2-methyl-2-butanolate), Ni[OC(CH 3 ) (C 2 H 5 )CH 2 N(CH 3 ) 2 ] 2 , and employed it in the MOCVD of nickel oxide (NiO). A stainless steel, cold-wall, low-pressure reactor was employed to grow the NiO