✦ LIBER ✦

Improved performance of SiC MESFETs using double-recessed structure

✍ Scribed by C.L. Zhu; Rusli; C.C. Tin; G.H. Zhang; S.F. Yoon; J. Ahn

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Improved 4H–SiC MESFET with double sourc

✍ S. Mohammad Noorbakhsh; Hossein Elahipanah 📂 Article 📅 2012 🏛 Elsevier Science 🌐 English ⚖ 861 KB

Gain improvement and microwave operation

✍ Hossein Elahipanah; Ali A. Orouji 📂 Article 📅 2012 🏛 Elsevier Science 🌐 English ⚖ 709 KB

Overall performance improvement in GaAs

✍ Rong-Heng Yuang; Jia-Lin Shieh; Jen-Inn Chyi; Jyh-Shin Chen 📂 Article 📅 1997 🏛 IEEE 🌐 English ⚖ 166 KB

PERFORMANCE IMPROVEMENT OF SiC GRINDING

✍ Agarwal, Sanjay; Venkateswara Rao, P. 📂 Article 📅 2007 🏛 Taylor and Francis Group 🌐 English ⚖ 836 KB

Improvement of the drain breakdown volta

✍ Furutsuka, T.; Tsuji, T.; Hasegawa, F. 📂 Article 📅 1978 🏛 IEEE 🌐 English ⚖ 563 KB

Improvement of RF performance of GaAs/Si

✍ Sriram, S.; Messham, R.L.; Smith, T.J.; Eldridge, G.W. 📂 Article 📅 1996 🏛 IEEE 🌐 English ⚖ 363 KB