Improved Output Power of InGaN-Based Ultraviolet LEDs Using a Heavily Si-Doped GaN Insertion Layer Technique

✍ Scribed by Ching-Hsueh Chiu; Chien-Chung Lin; Po-Min Tu; Shih-Cheng Huang; Chia-Cheng Tu; Jin-Chai Li; Zhen-Yu Li; Wu-Yih Uen; Hsiao-Wen Zan; Tien-Chang Lu; Hao-Chung Kuo; Shing-Chung Wang; Chun-Yen Chang

• Book ID: 114566110
• Publisher: IEEE
• Year: 2012
• Tongue: English
• Weight: 815 KB
• Volume: 48
• Category: Article
• ISSN: 0018-9197
• DOI: 10.1109/jqe.2011.2170553