Improved Output Power of 380 nm InGaN-Based LEDs Using a Heavily Mg-Doped GaN Insertion Layer Technique

✍ Scribed by Shih-Cheng Huang; Dong-Sing Wuu; Peng-Yi Wu; Shih-Hsiung Chan

• Book ID: 114570690
• Publisher: IEEE
• Year: 2009
• Tongue: English
• Weight: 445 KB
• Volume: 15
• Category: Article
• ISSN: 1077-260X
• DOI: 10.1109/jstqe.2009.2014778