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Improved light output power in GaN-based vertical light-emitting diodes with p-AlInGaN/GaN superlattices

โœ Scribed by Su Jin Kim; Sung Hun Son; Tae Geun Kim


Book ID
115076826
Publisher
The Korean Physical Society
Year
2012
Tongue
English
Weight
306 KB
Volume
60
Category
Article
ISSN
0374-4884

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The surface patterning of the indium tin oxide (ITO) transparent current layer has been investigated to improve the light extraction efficiency of GaN-based light-emitting diodes (LEDs). LEDs with periodic micro-hexagon patterned ITO have been fabricated utilizing standard lithography techniques and