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Improved light extraction of GaN-based light-emitting diodes with surface-patterned ITO

✍ Scribed by Pei Wang; Zhiyin Gan; Sheng Liu

Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
477 KB
Volume
41
Category
Article
ISSN
0030-3992

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✦ Synopsis

The surface patterning of the indium tin oxide (ITO) transparent current layer has been investigated to improve the light extraction efficiency of GaN-based light-emitting diodes (LEDs). LEDs with periodic micro-hexagon patterned ITO have been fabricated utilizing standard lithography techniques and inductively coupled plasma (ICP) technology. The luminance intensity of the LED chips with patterned ITO following 160 s ICP etching was enhanced by about 50% compared to the LED chips with unpatterned ITO. Detailed processing parameters are provided. scanning electron microscopy (SEM) and atomic force microscopy (AFM) are used to examine the micro-structures. The results indicate that the surface-patterned ITO technique could have potential applications in high-power GaN-based LEDs.

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