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High-power GaN light-emitting diodes with patterned copper substrates by electroplating

โœ Scribed by Horng, R. H. ;Lee, C. E. ;Hsu, S. C. ;Huang, S. H. ;Wu, C. C. ;Kung, C. Y. ;Wuu, D. S.


Publisher
John Wiley and Sons
Year
2004
Tongue
English
Weight
111 KB
Volume
201
Category
Article
ISSN
0031-8965

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## Abstract We demonstrated activation annealing of Mgโ€doped pโ€type Al~0.17~Ga~0.83~N in different gases. The hole concentration of Al~0.17~Ga~0.83~N annealed in oxygen is higher than that annealed in nitrogen or air. A hole concentration of 1.3โ€‰ร—โ€‰10^16^โ€‰cm^โˆ’3^ at room temperature was achieved by a