𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Improved interfacial properties of SiO2grown on 6H-SiC in diluted NO

✍ Scribed by P.T. Lai; J.P. Xu; C.X. Li; C.L. Chan

Book ID
106019583
Publisher
Springer
Year
2005
Tongue
English
Weight
631 KB
Volume
81
Category
Article
ISSN
1432-0630

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Observation of novel defect structure in
Observation of novel defect structure in 2H-AlN grown on 6H-SiC(0001) substrates with 3-bilayer-height step-and-terrace structures
✍ Okumura, Hironori ;Horita, Masahiro ;Kimoto, Tsunenobu ;Suda, Jun πŸ“‚ Article πŸ“… 2009 πŸ› John Wiley and Sons 🌐 English βš– 335 KB

## Abstract 250 nm thick AlN layers without a nucleation layer were grown directly on 6H‐SiC(0001) with 3‐bilayer‐height steps by rf‐plasma‐assisted molecular‐beam epitaxy. The structure and morphology of the AlN layers have been studied using atomic force microscopy, X‐ray diffraction and transmis