Improved electrical properties of HfTiO/GeOxNygate dielectric Ge MOS capacitors by using wet–NO Ge-surface pretreatment

✍ Scribed by J. P. Xu; X. Zou; C. X. Li; P. T. Lai; C. L. Chan

• Book ID: 106021332
• Publisher: Springer
• Year: 2008
• Tongue: English
• Weight: 287 KB
• Volume: 94
• Category: Article
• ISSN: 1432-0630
• DOI: 10.1007/s00339-008-4830-6