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Improved device performance of InAsâGaAs quantum dot solar cells with GaP strain compensation layers

✍ Scribed by Laghumavarapu, R. B.; El-Emawy, M.; Nuntawong, N.; Moscho, A.; Lester, L. F.; Huffaker, D. L.

Book ID: 120525158
Publisher: American Institute of Physics
Year: 2007
Tongue: English
Weight: 451 KB
Volume: 91
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.2816904

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