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Ground-state lasing of stacked InAs∕GaAs quantum dots with GaP strain-compensation layers grown by metal organic chemical vapor deposition

✍ Scribed by Tatebayashi, J.; Nuntawong, N.; Xin, Y. C.; Wong, P. S.; Huang, S. H.; Hains, C. P.; Lester, L. F.; Huffaker, D. L.

No coin nor oath required. For personal study only.

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