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Effect of strain-compensation in stacked 1.3 μm InAs∕GaAs quantum dot active regions grown by metalorganic chemical vapor deposition

✍ Scribed by Nuntawong, N.; Birudavolu, S.; Hains, C. P.; Huang, S.; Xu, H.; Huffaker, D. L.

Book ID: 124055167
Publisher: American Institute of Physics
Year: 2004
Tongue: English
Weight: 572 KB
Volume: 85
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.1805707

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