Improved device performance and reliability of n-channel and p-channel MOSFETs with ultrathin gate oxides prepared by conventional furnace oxidation of Si in pure N2O ambient

✍ Scribed by Lo, G.Q.; Ting, W.; Ahn, J.; Kwong, D.L.

• Book ID: 114534791
• Publisher: IEEE
• Year: 1991
• Tongue: English
• Weight: 277 KB
• Volume: 38
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.158739